Shape and Interband Transition Behavior of InAs Quantum Dots Dependent on Number of Stacking Cycles
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-01-15
著者
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Kim Tae
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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Park Jung
School Of Electrical Engineering Korea University
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KIM Kwang
Semiconductor Materials Laboratory, Nano-device Research Center, Korea Institute of Science and Tech
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PARK Young
Semiconductor Materials Laboratory, Nano-device Research Center, Korea Institute of Science and Tech
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ROH Cheong
Semiconductor Materials Laboratory, Nano-device Research Center, Korea Institute of Science and Tech
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KIM Eun
Department of Phpysics, Hanyang University
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HYON Chan
Semiconductor Materials Laboratory, Nano-device Research Center, Korea Institute of Science and Tech
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Roh Cheong
Semiconductor Materials Laboratory Nano-device Research Center Korea Institute Of Science And Techno
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