Jung Woon | Quantum-functional Semiconductor Research Center Dongguk University

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著作論文

Hydrogenation and Annealing Effects on Deep Levels in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates : Semiconductors
Activation Energy, Capture Cross Section, and Emission Frequency of the Trap Level in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates in a Nitrogen-Rich Atmosphere
Annealing Effect on Passivated Deep Levels in GaN Epilayers

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