Characteristics of Tunneling Nitride Grown by Electron Cyclotron Resonance Nitrogen-Plasma Nitridation and Its Application to Low-Voltage Electrical Erasable-Programmable Read-Only Memory
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-01
著者
-
Min Kyeong-sik
Advanced Dram Design Department Hyundai Electronics Industries Co. Ltd.
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Lee Kwyro
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology
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Chung Jin-yong
Advanced Dram Design Department Hyundai Electronics Industries Co. Ltd.
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- Characteristics of Tunneling Nitride Grown by Electron Cyclotron Resonance Nitrogen-Plasma Nitridation and Its Application to Low-Voltage Electrical Erasable-Programmable Read-Only Memory