CMOS Charge Pumps Using Cross-Coupled Charge Transfer Switches with Improved Voltage Pumping Gain and Low Gate-Oxide Stress for Low-Voltage Memory Circuits
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概要
- 論文の詳細を見る
To overcome the problems of the modified Dickson pump like NCP-2, another pump (CCTS-1) where simple voltage doublers are cascaded in series and each of them has cross-coupled configuration is studied in this letter for possible use in low-voltage EEPROMs and DRAMs. Though this concept of cascading doublers has been previously proposed, it is firstly addressed in this letter that CCTS-1 has lower gate-oxide stress, improved voltage pumping gain, and better power efficiency than NCP-2 so that CCTS-1 can be more suitable for multi-stage pump in particular at low V_CC.7 In addition, CCTS-2 is proposed to overcome the degraded body-effect of CCTS-1 without using boosted clocks when the stage number is large.
- 社団法人電子情報通信学会の論文
- 2002-01-01
著者
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Min Kyeong-sik
Advanced Dram Design Department Hyundai Electronics Industries Co. Ltd.
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Min Kyeong-sik
Advanced Memory Design Department Memory R&d D Ivision Hynix Semiconductor Inc.
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Ahn Jin-hong
Advanced Memory Design Department Memory R&d D Ivision Hynix Semiconductor Inc.
関連論文
- Characteristics of Tunneling Nitride Grown by Electron Cyclotron Resonance Nitrogen-Plasma Nitridation and Its Application to Low-Voltage Electrical Erasable-Programmable Read-Only Memory
- CMOS Charge Pumps Using Cross-Coupled Charge Transfer Switches with Improved Voltage Pumping Gain and Low Gate-Oxide Stress for Low-Voltage Memory Circuits
- Characteristics of Tunneling Nitride Grown by Electron Cyclotron Resonance Nitrogen-Plasma Nitridation and Its Application to Low-Voltage Electrical Erasable-Programmable Read-Only Memory