Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p-n Junction Epitaxial Layers (Special Issue : Recent Advances in Nitride Semiconductors)

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概要

• 論文の詳細を見る
• The Japan Society of Applied Physicsの論文

著者

• Tanaka Shigehisa

  Central Research Laboratory Hitachi Limited

• Tsuchiya Tomonobu

  Central Research Laboratory Hitachi Ltd

• Uchiyama Hiroyuki

  Central Research Lab. Hitachi Ltd.

• Nakamura Tohru

  Department Of Applied Chemistry And Chemical Engineering Faculty Of Engineering Kagoshima University

• Terano Akihisa

  Central Research Laboratory Hitachi Ltd.

• Ishida Yuya

  Department Of Dermatology Kyoto University Graduate School Of Medicine

• Mochizuki Kazuhiro

  Central Research Lab.hitachi Ltd.

• Mishima Tomoyoshi

  Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan

• Kaneda Naoki

  Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan

• Nomoto Kazuki

  Research Center for Micro--Nano Technology, Hosei University, Koganei, Tokyo 184-0003, Japan

• Uchiyama Hiroyuki

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

• Mishima Tomoyoshi

  Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan

• Nakamura Tohru

  Department of Electronics, Electrical and Computer Engineering, Hosei University, Koganei, Tokyo 184-8584, Japan

• Hatakeyama Yoshitomo

  Department of Electronics, Electrical and Computer Engineering, Hosei University, Koganei, Tokyo 184-8584, Japan

• Tshuchiya Tadayoshi

  Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan

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