Nomoto Kazuki | Research Center for Micro--Nano Technology, Hosei University, Koganei, Tokyo 184-0003, Japan
スポンサーリンク
概要
- Nomoto Kazukiの詳細を見る
- 同名の論文著者
- Research Center for Micro--Nano Technology, Hosei University, Koganei, Tokyo 184-0003, Japanの論文著者
関連著者
-
Tanaka Shigehisa
Central Research Laboratory Hitachi Limited
-
Tsuchiya Tomonobu
Central Research Laboratory Hitachi Ltd
-
Uchiyama Hiroyuki
Central Research Lab. Hitachi Ltd.
-
Nakamura Tohru
Department Of Applied Chemistry And Chemical Engineering Faculty Of Engineering Kagoshima University
-
Terano Akihisa
Central Research Laboratory Hitachi Ltd.
-
Ishida Yuya
Department Of Dermatology Kyoto University Graduate School Of Medicine
-
Mochizuki Kazuhiro
Central Research Lab.hitachi Ltd.
-
Mishima Tomoyoshi
Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
-
Kaneda Naoki
Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
-
Nomoto Kazuki
Research Center for Micro--Nano Technology, Hosei University, Koganei, Tokyo 184-0003, Japan
-
Uchiyama Hiroyuki
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
-
Mishima Tomoyoshi
Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
-
Nakamura Tohru
Department of Electronics, Electrical and Computer Engineering, Hosei University, Koganei, Tokyo 184-8584, Japan
-
Hatakeyama Yoshitomo
Department of Electronics, Electrical and Computer Engineering, Hosei University, Koganei, Tokyo 184-8584, Japan
-
Tshuchiya Tadayoshi
Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
-
Kaneda Naoki
Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
著作論文
- Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p--n Junction Epitaxial Layers
- Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p-n Junction Epitaxial Layers (Special Issue : Recent Advances in Nitride Semiconductors)