Mishima Tomoyoshi | Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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概要
- Mishima Tomoyoshiの詳細を見る
- 同名の論文著者
- Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japanの論文著者
関連著者
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Tanaka Shigehisa
Central Research Laboratory Hitachi Limited
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Tsuchiya Tomonobu
Central Research Laboratory Hitachi Ltd
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Uchiyama Hiroyuki
Central Research Lab. Hitachi Ltd.
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Nakamura Tohru
Department Of Applied Chemistry And Chemical Engineering Faculty Of Engineering Kagoshima University
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Terano Akihisa
Central Research Laboratory Hitachi Ltd.
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Ishida Yuya
Department Of Dermatology Kyoto University Graduate School Of Medicine
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Mochizuki Kazuhiro
Central Research Lab.hitachi Ltd.
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Mishima Tomoyoshi
Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Kaneda Naoki
Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Nomoto Kazuki
Research Center for Micro--Nano Technology, Hosei University, Koganei, Tokyo 184-0003, Japan
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Uchiyama Hiroyuki
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Mishima Tomoyoshi
Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Nakamura Tohru
Department of Electronics, Electrical and Computer Engineering, Hosei University, Koganei, Tokyo 184-8584, Japan
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Hatakeyama Yoshitomo
Department of Electronics, Electrical and Computer Engineering, Hosei University, Koganei, Tokyo 184-8584, Japan
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Tshuchiya Tadayoshi
Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Kaneda Naoki
Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
著作論文
- Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p--n Junction Epitaxial Layers
- Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p-n Junction Epitaxial Layers (Special Issue : Recent Advances in Nitride Semiconductors)