Terano Akihisa | Central Research Laboratory Hitachi Ltd.
スポンサーリンク
概要
関連著者
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Terano Akihisa
Central Research Laboratory Hitachi Ltd.
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Uchiyama Hiroyuki
Central Research Lab. Hitachi Ltd.
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TERANO Akihisa
Central Research Laboratory, Hitachi, Ltd.
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MASUDA Hiroshi
Toei Kogyo Ltd.
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Tsuchiya Tomonobu
Central Research Laboratory Hitachi Ltd
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MASUDA Hiroshi
Central Research Laboratory, Hitachi, Ltd.
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TANOUE Tomonori
Central Research Laboratory, Hitachi, Ltd.
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Tanoue T
Central Research Laboratory Hitachi Ltd.
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Tanoue Tomonori
Central Research Laboratory Hitachi Ltd.
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Masuda H
Toei Kogyo Ltd.
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Mochizuki Kazuhiro
Central Research Lab.hitachi Ltd.
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Masuda Hiroshi
Central Research Laboratory Hitachi Ltd.
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Mishima Tomoyoshi
Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Kaneda Naoki
Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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UCHIYAMA Hiroyuki
Central Research Lab., Hitachi, Ltd.
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Tanaka Shigehisa
Central Research Laboratory Hitachi Limited
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Uchiyama Hiroyuki
Central Research Laboratory Hitachi Ltd.
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Hirata K
Laboratory Of Protein Chemistry And Engineering Graduate School Of Genetic Resources Technology Kyus
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Uchiyama H
International Superconductivity Technol. Center Tokyo Jpn
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Nakamura Tohru
Department Of Applied Chemistry And Chemical Engineering Faculty Of Engineering Kagoshima University
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Ishida Yuya
Department Of Dermatology Kyoto University Graduate School Of Medicine
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HIRATA Koji
Hitachi ULSI Engineering Corporation
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Nomoto Kazuki
Research Center for Micro--Nano Technology, Hosei University, Koganei, Tokyo 184-0003, Japan
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Uchiyama Hiroyuki
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Mishima Tomoyoshi
Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Nakamura Tohru
Department of Electronics, Electrical and Computer Engineering, Hosei University, Koganei, Tokyo 184-8584, Japan
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Hatakeyama Yoshitomo
Department of Electronics, Electrical and Computer Engineering, Hosei University, Koganei, Tokyo 184-8584, Japan
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Tshuchiya Tadayoshi
Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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TANAKA Satoshi
Central Research Laboratory, Hitachi Ltd.
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TANIMOTO Takuma
Central Research Laboratory, Hitachi, Ltd.
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OHBU Isao
Central Research Laboratory, Hitachi, Ltd.
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OUCHI Kiyoshi
Central Research Laboratory, Hitachi, Ltd.
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NAKAMURA Tohru
Central Research Laboratory, Hitachi, Ltd.
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Oka Tohru
Central Research Laboratory Hitachi Ltd.
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Ohbu Isao
Central Research Laboratory Hitachi Ltd.
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Matsumoto Hidetoshi
Central Research Laboratory, Hitachi, Ltd.
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Ouchi Kiyoshi
Central Research Laboratory Hitachi Ltd.
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SUZUKI Hideyuki
Central Research Laboratory, Hitachi, Ltd.
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WATANABE Koichi
Central Research Laboratory, Hitachi, Ltd.
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MATSUBARA Hirokazu
Central Research Laboratory, Hitachi, Ltd.
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Matsumoto Hidetoshi
Central Research Lab. Hitachi Ltd.
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Tanimoto Takuma
Central Research Laboratory Hitachi Ltd.
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Nakamura Tohru
Central Research Lab. Hitachi Ltd.
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Nakamura Tohru
Central Research Laboratory Hitachi Ltd.
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Suzuki Hideyuki
Central Research Laboratory Hitachi Ltd.
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Tanaka Satoshi
Central Research Laboratory Hitachi Ltd.
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Watanabe Koichi
Central Research Laboratory Hitachi Ltd.
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Ishigaki Takashi
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Kaneda Naoki
Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Tsuchiya Tomonobu
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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TANAKA Satoshi
Central Research Laboratories, Sysmex Corporation
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Terano Akihisa
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Kaneda Naoki
Research and Development Laboratory, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
著作論文
- High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Single Voltage Supply High Efficiency InGaAs Pseudomorphic Double-Hetero HEMTs with Platinum Buried Gates
- InGaP/GaAs Sub-Square-Micron Emitter HBT with f_>100 GHz
- InGaP/GaAs Sub-Square-Micron Emitter HBT with f_>100GHz
- Analysis of Leakage Current at Pd/AlGaN Schottky Barriers Formed on GaN Free-Standing Substrates
- Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p--n Junction Epitaxial Layers
- Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p-n Junction Epitaxial Layers (Special Issue : Recent Advances in Nitride Semiconductors)