TANOUE Tomonori | Central Research Laboratory, Hitachi, Ltd.
スポンサーリンク
概要
関連著者
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TANOUE Tomonori
Central Research Laboratory, Hitachi, Ltd.
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Tanoue Tomonori
Central Research Laboratory Hitachi Ltd.
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Tanoue T
Central Research Laboratory Hitachi Ltd.
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MASUDA Hiroshi
Central Research Laboratory, Hitachi, Ltd.
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Masuda Hiroshi
Central Research Laboratory Hitachi Ltd.
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OUCHI Kiyoshi
Central Research Laboratory, Hitachi, Ltd.
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MASUDA Hiroshi
Toei Kogyo Ltd.
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Oka Tohru
Central Research Laboratory Hitachi Ltd.
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Ouchi Kiyoshi
Central Research Laboratory Hitachi Ltd.
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TERANO Akihisa
Central Research Laboratory, Hitachi, Ltd.
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Terano Akihisa
Central Research Laboratory Hitachi Ltd.
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Masuda H
Toei Kogyo Ltd.
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MISHIMA Tomoyoshi
Central Research Laboratory, Hitachi, Ltd.
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UCHIYAMA Hiroyuki
Central Research Lab., Hitachi, Ltd.
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Uchiyama Hiroyuki
Central Research Lab. Hitachi Ltd.
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Uchiyama Hiroyuki
Central Research Laboratory Hitachi Ltd.
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Hirata K
Laboratory Of Protein Chemistry And Engineering Graduate School Of Genetic Resources Technology Kyus
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Uchiyama H
International Superconductivity Technol. Center Tokyo Jpn
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MOCHIZUKI Kazuhiro
Central Research Laboratory, Hitachi Ltd.
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HIRATA Koji
Hitachi ULSI Engineering Corporation
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Mochizuki K
Central Research Laboratory Hitachi Ltd.
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Mochizuki Kazuhiro
Central Research Lab.hitachi Ltd.
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Mishima T
Central Research Laboratory Hitachi Ltd.
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Mishima Tomoyoshi
Central Research Lab. Hitachi Ltd.
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Kikawa Takeshi
Central Research Laboratory, Hitachi Ltd.
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TAKATANI Shinichiro
Central Research Laboratory, Hitachi, Ltd.
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Kikawa Takeshi
Central Research Laboratory Hitachi Ltd.
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SUZUKI Hideyuki
Central Research Laboratory, Hitachi, Ltd.
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WATANABE Koichi
Central Research Laboratory, Hitachi, Ltd.
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MATSUBARA Hirokazu
Central Research Laboratory, Hitachi, Ltd.
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Takatani Shinichiro
Central Research Laboratory Hitachi Ltd.
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Suzuki Hideyuki
Central Research Laboratory Hitachi Ltd.
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Watanabe Koichi
Central Research Laboratory Hitachi Ltd.
著作論文
- High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
- Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors
- Passivation of InP-Based Heterostructure Bipolar Transistors in Relation to Surface Fermi Level
- InGaP/GaAs Sub-Square-Micron Emitter HBT with f_>100 GHz
- InGaP/GaAs Sub-Square-Micron Emitter HBT with f_>100GHz