Mishima Tomoyoshi | Central Research Lab. Hitachi Ltd.

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概要

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著作論文

Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates
Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In_Al_As/In_Ga_As/InAsP High-Electron-Mobility Structures on GaAs Substrates
Enhanced Electron Mobility in the Inverted High Electron Mobility Transistor Structure by Two-Step Molecular Beam Epitaxy (MBE) Growth
Single and Double δ-Doped Al_Ga_As/In_Ga_As Pseudomorphic Heterostructures Grown by Molecular-Beam Epitaxy
Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure
InAlAs/InGaAs HEMTs with Uniform Threshold Voltage Fabricated by Selective Wet-Etching Using Adipic Acid
High-Performance In_Al_As/In_Ga_As High Electron Mobility Transistors on GaAs
Highly Selective Wet-Etching Using Adipic Acid for Uniform Damage-Free Process of InAlAs/InGaAs HEMTs
Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors
Improved Electron Mobility of AlInSb/InAsSb/AlInSb Heterostructures Grown Lattice-Mismatched on GaAs Substrates
Applying a Mode Selector to Improve the Pulse-Compression Performance of Asymmetric-Coupled-Waveguide-Based Dispersion Compensators
Light Modulation by Polariton Directional-Coupler-Type Devices (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
Light Modulation by Polariton Directional-Coupler-Type Devices (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs-GaAs Heterostructure
Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. : II. Experiment
High Breakdown Voltage InAlAs/InGaAs High Electron Mobility Transistors on GaAs with Wide Recess Structure
Influence of Substrate Orientation on Be Transport during Molecular Beam Epitaxy of AlGaAs/GaAs Heterojunction Bipolar Transistors
Increased Hole Mobility of p-GaSb/GaAs Short-Period Superlattices Grown on InP Substrates

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