Increased Hole Mobility of p-GaSb/GaAs Short-Period Superlattices Grown on InP Substrates
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概要
- 論文の詳細を見る
To increase the hole mobility of heavily-doped GaAsSb layers lattice-matched with InP substrates, GaAs/GaSb short-period superlattices were grown by molecular beam epitaxy. The hole mobility of a 50-nm-thick GaAsSb layer increased from 35 to 55 cm2V-1s-1 by changing the layer structure from a random-alloy one to short-period-superlattice one (doping concentration: about $3\times 10^{19}$ cm-3). The mobility was further increased to 68 cm2V-1s-1 by thinning the first layer of the short-period superlattice.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-04-15
著者
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Kudo Makoto
Central Research Lab. Hitachi Ltd.
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Kasai Jun-ichi
Central Research Laboratory Hitachi Ltd.
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Ouchi Kiyoshi
Central Research Laboratory Hitachi Ltd.
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Mishima Tomoyoshi
Central Research Lab. Hitachi Ltd.
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Mishima Tomoyoshi
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Kudo Makoto
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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