Fabrication of InAlAs/InGaAs High-Electron-Mobility Transistors Using ArF-Excimer-Laser-Assisted Damage-Free Highly Selective InGaAs/InAlAs Etching
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-12-30
著者
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KUDO Makoto
Central Research Laboratory, Hitachi, Ltd.
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HIGUCHI Katsuhiko
Central Research Laboratory, Hitachi, Ltd.
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TAKATANI Shinichiro
Central Research Laboratory, Hitachi, Ltd.
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Kudo Makoto
Central Research Lab. Hitachi Ltd.
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TAKAZAWA Hiroyuki
Central Research Laboratory, Hitachi Ltd.
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Takazawa Hiroyuki
Central Research Laboratory Hitachi Ltd.
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Higuchi Katsuhiko
Central Research Lab. Hitachi Ltd.
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Takatani Shinichiro
Central Research Laboratory Hitachi Ltd.
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Higuchi Katsuhiko
Central Research Laboratory, Hitachi Ltd.
関連論文
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- Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
- Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
- High-Performance HEMT with an Offset-Gate Structure for Millimeter-Wave Monolithic Microwave ICs
- Amorphous-Se/GaAs : A Novel Heterostructure for Solid-State Devices
- Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates
- Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In_Al_As/In_Ga_As/InAsP High-Electron-Mobility Structures on GaAs Substrates
- Dry Etching Damage and Activation Ratio Degradation in δ-Doped AlGaAs/InGaAs High Electron Mobility Transistors
- Enhanced Electron Mobility in the Inverted High Electron Mobility Transistor Structure by Two-Step Molecular Beam Epitaxy (MBE) Growth
- Single and Double δ-Doped Al_Ga_As/In_Ga_As Pseudomorphic Heterostructures Grown by Molecular-Beam Epitaxy
- InAsSb Quantum Dots Grown on GaAs Substrates by Molecular Beam Epitaxy
- InAlAs/InGaAs HEMTs with Uniform Threshold Voltage Fabricated by Selective Wet-Etching Using Adipic Acid
- High-Performance In_Al_As/In_Ga_As High Electron Mobility Transistors on GaAs
- Highly Selective Wet-Etching Using Adipic Acid for Uniform Damage-Free Process of InAlAs/InGaAs HEMTs
- Chemical State Analysis of Silicon-Oxygen Compounds : CHEMICAL APPLICATIONS
- Reduction of Schottky Reverse Leakage Current Using GaAs Surface Cleaning with UVO_3 Treatment
- ArF-Excimer-Laser-Assisted Highly Selective Etching of InGaAs/InAlAs Using HBr and F_2 Gas Mixture
- Fabrication of InAlAs/InGaAs High-Electron-Mobility Transistors Using ArF-Excimer-Laser-Assisted Damage-Free Highly Selective InGaAs/InAlAs Etching
- Highly-Selective Dry Etching of InAlAs Over InGaAs Assisted by ArF Excimer Laser with Cl_2 Gas
- Linearity Study on Enhance/Depletion Dual-Gate High Electron Mobility Transitors using Gain Mapping Method
- GaAs MESFET's with a Thermally Stable LaB_6 Self-Aligned Gate
- Passivation of InP-Based Heterostructure Bipolar Transistors in Relation to Surface Fermi Level
- Evidence of Ga_2Se_3-Related Compounds on Se-Stabilized GaAs Surfaces
- Effect of H_2 Annealing on a Pt/PbZr_xTi_0_3 Interface Studied by X-Ray Photoelectron Spectroscopy
- 1.45 μm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy
- Improved Electron Mobility of AlInSb/InAsSb/AlInSb Heterostructures Grown Lattice-Mismatched on GaAs Substrates
- Electron Beam Brightness from Negative-Electron-Affinity Photocathodes for Scanning Electron Microscopy Application
- High Breakdown Voltage InAlAs/InGaAs High Electron Mobility Transistors on GaAs with Wide Recess Structure
- Electron Beam Brightness from Negative-Electron-Affinity Photocathodes for Scanning Electron Microscopy Application
- Design and Performance of Intergate-Channel-Connected Multi-Gate pHEMT for Antenna Switch
- Increased Hole Mobility of p-GaSb/GaAs Short-Period Superlattices Grown on InP Substrates
- Amplified Spontaneous Emission Measurement of GaInNAs Laser Wafers with and without Rapid Thermal Annealing