Effect of H_2 Annealing on a Pt/PbZr_xTi_<1-x>0_3 Interface Studied by X-Ray Photoelectron Spectroscopy
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概要
- 論文の詳細を見る
The chemical reaction and the change in the Schottky barrier height at the Pt/PbZr_xTi_<1-x>0_3 (PZT) interface as a result of annealing was studied by in-vacuo X-ray photoelectron spectroscopy. Annealing at 32O℃ produced metallic Pb atoms which migrated on the Pt surface. There were more of these atoms when the annealing was done in H_2 than in a vacuum. After H_2 annealing, the core level peaks for the elements in the PZT showed a band bending shift of 〜 0.4 toward higluer binding energy, indicating that the n-type Schottky barrier height at the Pt/PZT interface was lowered by the Hz annealing.
- 社団法人応用物理学会の論文
- 1997-04-01
著者
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TAKATANI Shinichiro
Central Research Laboratory, Hitachi, Ltd.
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Miki Hiroshi
Central Research Laboratory Hitachi Ltd.
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Kushida-abdelghafar Keiko
Central Research Laboratory Hitachi Limited
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Kushida-abdelghafar Keiko
Central Research Laboratory Hitachi Ltd.
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Takatani Shinichiro
Central Research Laboratory Hitachi Ltd.
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Miki Hiroshi
Central Research Laboratory Hitachi Limited
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