Uniform Ultra-Thin Pb(Zr, Ti)O_3 Films Formed by Metal-Organic Chemical Vapor Deposition and Their Electrical Characteristics (<Special Issue> FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
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概要
- 論文の詳細を見る
Lead zirconate titanate (Pb(Zr, Ti)O_3) thin films were deposited on Pt films sputtered on thermally oxidized silicon wafers by metal-organic chemical vapor deposition (MOCVD). The films were less than 100 nm thick (typically 80 nm), thin enough for use in LSI semiconductor memories. The films were characterized by inductive coupling plasma mass spectroscopy and X-ray diffraction. Electrical measurements revealed that the films had good ferroelectric characteristics, with a low coercive voltage of 0.7 V. In addition, the non-switching dielectric characteristics for application to dynamic random access memory (DRAM) were equivalent to those of 0.4 nm of SiO_2 with small leakage current.
- 社団法人応用物理学会の論文
- 1994-09-30
著者
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Ohji Yuzuru
Central Research Laboratory Hitachi
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Ohji Yuzuru
Central Research Laboratory Hitachi Ltd.
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Miki Hiroshi
Central Research Laboratory Hitachi Ltd.
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Miki Hiroshi
Central Research Laboratory Hitachi Limited
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Miki Hiroshi
central Research Laboratory, Hitachi, Ltd.
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