Improved Resistance Against the Reductive Ambient Annealing of Ferroelectric Pb(Zr, Ti)O_3 Thin Film Capacitors with IrO_2 Top Electrode(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
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概要
- 論文の詳細を見る
Degradation of ferroelectricity in PZT (Pb(Zr_0.52, Ti_0.48)O_3) thin-film capacitors caused by heat treatment in a reductive ambience is investigated.We have found that the degradation of ferroelectricity depends upon the metal used for the top electrode of the PZT capacitor.The increased degradation in the case of a PZT capacitor with Pt electrodes can be explained by a catalytic reaction on the Pt surface.With the use of an IrO_2 non-catalytic top electrode, we have made the ferroelectricity of an IrO_2/PZT/Pt capacitor retained even after the H_2 annealing at 400℃, or above.
- 社団法人電子情報通信学会の論文
- 1998-04-25
著者
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MIKI Hiroshi
Department of Pathology, Kagawa Medical University
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Miura H
Hitachi Ltd. Tsuchiura‐shi Jpn
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Kushida‐abdelghafar K
The Authors Are With Central Research Laboratory Hitachi Ltd.
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Shimamoto Yasuhiro
Central Research Laboratory Hitachi Ltd.
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FUJISAKI Yoshihisa
The authors are with Central Research Laboratory, Hitachi Ltd.
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KUSHIDA-ABDELGHAFAR Keiko
The authors are with Central Research Laboratory, Hitachi Ltd.
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MIKI Hiroshi
The authors are with Central Research Laboratory, Hitachi Ltd.
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SHIMAMOTO Yasuhiro
The authors are with Central Research Laboratory, Hitachi Ltd.
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Shimamoto Y
Hitachi Ltd. Tokyo Jpn
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Fujisaki Y
R&d Association For Future Electron Devices
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Miki Hiroshi
Central Research Laboratory Hitachi Limited
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Fujisaki Yoshihisa
R&D Association for Future Electron Devices
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