IrO_2/Pb(Zr_xTi_<1-x>)O_3(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to Hydrogen-Annealing Damage

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概要

• 論文の詳細を見る

• The PZT polarization hysteresis characteristics in a Pt/PZT/Pt ferroelectric capacitor are degraded by annealing in a hydrogen-containing atmosphere due to the catalytic effect of the top Pt electrode. This can be avoided by using an IrO_2/PZT/Pt capacitor structure as we proposed. During hydrogen annealing of the as-growth capacitor, the top IrO_2 electrode is deoxidized, degrading the capacitor characteristics. However, the polarization hysteresis characteristics are preserved after hydrogen annealing at 300℃ if the IrO_2/PZT/Pt capacitor is pre-annealed in oxygen at 600℃.

• 社団法人応用物理学会の論文
• 1997-08-01

著者

• FUJISAKI Yoshihisa

  Central Research Laboratory, Hitachi Ltd.

• MIKI Hiroshi

  Department of Pathology, Kagawa Medical University

• Miura H

  Hitachi Ltd. Tsuchiura‐shi Jpn

• Yano Fumiko

  Central Research Laboratory Hitachi Limited

• Miki Hiroshi

  Central Research Laboratory Hitachi Ltd.

• Kushida‐abdelghafar K

  The Authors Are With Central Research Laboratory Hitachi Ltd.

• Kushida-abdelghafar Keiko

  Central Research Laboratory Hitachi Limited

• Fujisaki Y

  R&d Association For Future Electron Devices

• Fujisaki Yoshihisa

  Central Research Laboratory Hitachi Limited

• Miki Hiroshi

  Central Research Laboratory Hitachi Limited

• Fujisaki Yoshihisa

  R&D Association for Future Electron Devices

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