Characterization of In20Ge15Sb10Te55 Phase Change Material for Phase Change Memory with Low Power Operation and Good Data Retention

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概要

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• An indium-incorporated germanium--antimony--telluride material, In20Ge15Sb10Te55 (IGST), was investigated as a recording material for phase change memory. The crystallization temperature of IGST was 226 °C, which is 75 °C higher than that of conventional GST. The reset current of the device using IGST was about 10 mA for a plug 180 nm in diameter, which enabled a low-power operation, compared with the GST-based device. A cycle endurance of up to 1.5\times 10^{4} was achieved. The data retention was estimated to be 10 years at 145 °C. These data clearly show that IGST exhibits promising characteristics as a recording material for phase change memory.

• 2012-03-25

著者

• MATSUI Yuichi

  Central Research Laboratory, Hitachi, Ltd.

• Takaura Norikatsu

  Central Research Laboratory Hitachi. Ltd.

• Fujisaki Yoshihisa

  Central Research Laboratory Hitachi Limited

• Kurotsuchi Kenzo

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

• Fujisaki Yoshihisa

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

• Morikawa Takahiro

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

• Morikawa Takahiro

  Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Takaura Norikatsu

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

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