Eliminating the Threshold-Voltage Offset of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors in High-Density Dynamic Random Access Memory
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概要
- 論文の詳細を見る
The threshold voltage offsets of paired p+-gate p-channel metal-oxide-semiconductor field effect transistors in high-density dynamic random access memory is investigated. The threshold voltage offset is shown to be mainly due to segregation of phosphorus at the edges of the shallow trench isolation when the gate oxide is formed. A 20-mV threshold-voltage offset was experimentally eliminated through control of the phosphorus concentration and the layout of the cross-couplings of sense amplifiers. It is expected that reduction in the threshold voltage offset will improve the retention times of gigabit-scale dynamic random access memory.
- 2004-04-15
著者
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NAGAI Ryo
Advanced Device Development Gr., Elpida Memory, Inc.
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YAMADA Satoru
Advanced Device Development Gr., Elpida Memory, Inc.
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ASAKURA Hisao
Information & Control Systems Division, Computer Systems Quality Assurance Section, Hitachi, Ltd.
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Matsuoka Hideyuki
Central Research Laboratory Hitachi Ltd.
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Takemura Riichiro
Central Research Laboratory Hitachi Ltd.
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Takaura Norikatsu
Central Research Laboratory Hitachi. Ltd.
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Matsuoka Hideyuki
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Nagai Ryo
Advanced Device Development Gr., Elpida Memory, Inc. 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Takemura Riichiro
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Asakura Hisao
Information & Control Systems Division, Computer Systems Quality Assurance Section, Hitachi, Ltd., Hitachi System Plaza Shinkawasaki, 890 Komukai Kashimada, Saiwai, Kawasaki, Kanagawa 212-8567, Japan
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Yamada Satoru
Advanced Device Development Gr., Elpida Memory, Inc. 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Takaura Norikatsu
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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