Eliminating the Threshold-Voltage Offset of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors in High-Density Dynamic Random Access Memory
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
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Kimura Shunji
Ntt Network Innovation Laboratories
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TAKEMURA Riichiro
Central Research Laboratory, Hitachi, Ltd.
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MATSUOKA Hideyuki
Central Research Laboratory, Hitachi, Ltd.
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TAKAURA Norikatsu
Central Research Laboratory, Hitachi, Ltd.
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NAGAI Ryo
Advanced Device Development Gr., Elpida Memory, Inc.
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YAMADA Satoru
Advanced Device Development Gr., Elpida Memory, Inc.
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ASAKURA Hisao
Information & Control Systems Division, Computer Systems Quality Assurance Section, Hitachi, Ltd.
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