Rectification of Millimeter Waves in Nanometer-Scale Si-Inversion-Layer Metal-Oxide-Semiconductor Field-Effect Transistors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-08-15

著者

• Tomaru Tatsuya

  Advanced Research Laboratory Hitachi Ltd.

• MATSUOKA Hideyuki

  Central Research Laboratory, Hitachi, Ltd.

• ICHIGUCHI Tsuneo

  Advanced Research Laboratory, Hitachi, Ltd.

• Matsuoka Hideyuki

  Central Research Laboratory Hitachi Ltd.

• Ichiguchi Tsuneo

  Advanced Research Laboratory Hitachi Ltd.

関連論文

• A Robust Array Architecture for a Capacitorless MISS Tunnel-Diode Memory(Integrated Electronics)
• Rectification of Millimeter Waves in Nanometer-Scale Si-Inversion-Layer Metal-Oxide-Semiconductor Field-Effect Transistors
• Eliminating the Threshold-Voltage Offset of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors in High-Density Dynamic Random Access Memory
• Fabrication of Deep Sub-μm Narrow-Channel Si-MOSFET's with Twofold-Gate Structures : Microfabrication and Physics
• Thermally Enhanced Co-Tunneling of Single Electrons in a Si Quantum Dot at 4.2 K
• Anomalous Conductance of Si-MOSFET Quantum Wires : From Quantum Wire to Quantum Dotted Line
• Eliminating the Threshold-Voltage Offset of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors in High-Density Dynamic Random Access Memory
• Dependence of Magnetic Anisotropy in Co_Fe_B_ Free Layers on Capping Layers in MgO-Based Magnetic Tunnel Junctions with In-Plane Easy Axis
• Secret Key Distribution Protocol for Practical Optical Channels Using a Preshared Key and Phase Fluctuations
• Fabrication of Deep Sub-$\mu$m Narrow-Channe1 Si-MOSFET's with Twofold-Gate Structures

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