Thermally Enhanced Co-Tunneling of Single Electrons in a Si Quantum Dot at 4.2 K
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概要
- 論文の詳細を見る
Transport properties of a Si quantum dot at 4.2 K have been studied. A quantum dot is realized in the inversion layer of a Si metal-oxide-semiconductor field-effect-transistor (Si-MOSFET) with a dual-gate structure by introducing controllable tunnel barriers in the narrow channel. Periodic current oscillations due to the single-electron charging effect have been observed. With increasing tunnel barrier heights, Coulomb gaps appear in the I-V characteristics. Furthermore, leakage current in the Coulomb blockade regime varies linearly with bias voltage, which is quantitatively described in terms of the inelastic co-tunneling theory at finite temperatures.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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Matsuoka Hideyuki
Central Research Laboratory Hitachi Ltd.
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Kimura Shin'ichiro
Central Research Laboratory Hitachi Ltd.
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Kimura Shin'ichiro
Central Research Laboratory, Hitachi, Ltd.
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