X-Ray Photoelectron Spectroscopy Study of Native Oxidation on Misoriented Si(100)

スポンサーリンク

概要

• 論文の詳細を見る

• Native oxidation on Si(100) misoriented by about 4 degrees toward [011], which is often used as a substrate for ULSI fabrications, is investigated. On the exactly oriented wafer, the relationship between the oxide thickness and the exposure time in a clean-room atmosphere showed that layer-by-layer oxidation clearly took place. However,the oxidation on the misoriented wafer followed a more linear pattern. We found that the oxidation on the misoriented wafer can be explained by quasi-one-dimensional oxidation model, where the oxidation is limited to the terrace width and spreads only in the direction along the terrace. Simvulated oxide thicknesses based on this model agreed well with our XPS results.

• 社団法人応用物理学会の論文
• 1997-06-01

著者

• Kanehori Keiichi

  Central Research Laboratory, Hitachi, Ltd.

• Kanehori Keiichi

  Central Research Laboratory Hitachi Ltd.

• Kanehori Keiichi

  Central Research Laboratory Hitachi Ltd

• Yano F

  Semiconductor & Integrated Circuits Division Hitachi Limited

• Yano Fumiko

  Central Research Laboratory Hitachi Limited

• Yano Fumiko

  Central Research Laboratory Hitachi Ltd.

• ITOGA Yoshihiko

  Central Research Laboratory, Hitachi, Ltd.

• Itoga Yoshihiko

  Central Research Laboratory Hitachi Ltd.

• Itoga Toshihiko

  Central Research Laboratories Hitachi Ltd.

関連論文

• Low-Temperature Annealing Effect on Bi-Sr-Ca-Cu-O Thin Films Prepared by Layer-by-Layer Deposition
• The Effect of Microwave-Plasma on Decomposition and Oxidation of Ba(THD)_2
• Spectroscopic Study on Plasma-Enhanced Chemical Vapor Deposition of YBa_2Cu_3O_x Superconducting Thin Films
• The Study of Ultrathin Tantalum Oxide Films before and after Annealing with X-Ray Photoelectron Spectroscopy
• Development of Ammonia Adsorption Filter and Its Application to LSI Manufacturing Environment
• The Effect of Isopropyl Alcohol Adsorption on the Electrical Characteristics of Thin Oxide
• The Effect of IPA Adsorption on Thin Oxide
• IrO_2/Pb(Zr_xTi_)O_3(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to Hydrogen-Annealing Damage
• Time-resolved acquisition technique for spatially-resolved electron energy-loss spectroscopy by energy-filtering TEM
• Time-resolved acquisition technique for elemental mapping by energy-filtering TEM
• Current Status and Future Trend of Analytical Instruments for Failure Analyses in Si Process
• X-Ray Photoelectron Spectroscopy Study of Native Oxidation on Misoriented Si(100)
• Highly Efficient Gettering of Heavy Metals Using Carbon Implanted Eptaxial Si Wafers
• Degradation of n^+/p Junction Characteristics by Aluminum Contamination
• The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere
• A Ceramic Plasma Torch for Determining Silicon Content in HF Solutions by Inductively Coupled Plasma Atomic Emission Spectrometry
• Ultra-Shallow Depth Profiling of Arsenic Implants in Silicon by Hydride Generation-Inductively Coupled Plasma Atomic Emission Spectrometry
• Position dependence of the visibility of a single gold atom in silicon crystals in HAADF-STEM image simulation
• Advantages of Fluorine Introduction in Boron Implanted Shallow p^+/n-Junction Formation
• Improvement of SiO2/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion
• Degradation of n+/p Junction Characteristics by Aluminum Contamination
• Carbon monoxide absorption by aqueous CuCl-MgCl2 absorbent.

もっと見る 閉じる

スポンサーリンク