Residual Stress Measurement in Silicon Substrates after Thermal Oxidation
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概要
- 論文の詳細を見る
The residual stress in silicon substrates after thermal oxidation is discussed experimentally. Microscopic Raman spectroscopy is used for the stress measurement. A 1-μm-diameter Ar^+laser beam is irradiated into the silicon substrate and the back-scattered light is detected by a photon multiplier. It is confirmed that the peak position of the Raman spectra shifted almost linearly with existing stress. After plane oxidation, tensile stress occurred near the silicon substrate surface due mainly to the volume expansion of the newly grown oxide film. However, complicated stress change occur-red in the substrate after local thermal oxidation. The stress change is explained by considering the curvature change of the Si/SiO_2 interface during local thermal oxidation.
- 一般社団法人日本機械学会の論文
- 1993-07-15
著者
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Ohta H
Okayama Univ. Dental School Okayama Jpn
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MIURA Hideo
Mechanical Engineering Research Laboratory, Hitachi, Ltd.
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MIKI Hiroshi
Department of Pathology, Kagawa Medical University
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Ohta H
Ibaraki Univ. Coll. Agriculture Ibaraki Jpn
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Miura H
Hitachi Ltd. Tsuchiura‐shi Jpn
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Okamoto Noriaki
Mechanical Engineering Research Laboratory Hitachi Ltd.
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OHTA Hiroyuki
Mechanical Engineering Research Laboratory, Hitachi, Ltd.
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SAKATA Hiroshi
Mechanical Engineering Research Laboratory,Hitachi Ltd.,
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Okamoto Noriaki
Mechanical Engineering Resarch Laboratory Hitachi Ltd.
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Ohta Hiroyuki
Mechanical Engineering Research Laboratory Hitachi Ltd.
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Sakata Hiroshi
Mechanical Engineering Research Laboratory Hitachi Ltd.
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Miura Hideo
Mechanical Engineering Research Laboratory Hitachi Lid.
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Miki Hiroshi
Central Research Laboratory Hitachi Limited
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