Mechanical Stress Simulation for Highly Reliable Deep-Submicron Devices (Special Issue on TCAD for Semiconductor Industries)

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概要

• 論文の詳細を見る

• We have improved the mechanical reliability of deep-submicron semiconductor devices by applying a simulation technique. Typical kinds of damages that reduce the reliability are dislocations in silicon substrates, delamination or cracking of thin films, and deterioration of electronic characteristics of devices. The mechanical stress that develops in device structures is caused by not only mismatches in thermal expansion coefficients among thin film materials but also intrinsic stress of thin films such as poly-silicon and silicides. Fine patterning by dry etching makes sharp edges and they also cause stress concentration and thus high stress. The manufacturing processes in which stress mainly develops are isolation, gate formation, and interconnect formation. We have developed methods for reducing the stress in each of the above-mentioned process. This stress reduction is very effective for highly reliable manufacturing. Finally, we clarify the effect of the residual stress in transistor structures on shift in the electronic characteristics of MOS transistors.

• 社団法人電子情報通信学会の論文
• 1999-06-25

著者

• IKEDA Shuji

  Semiconductor & Integrated Circuits Division, Hitachi Ltd.

• Ikeda Shuji

  Semiconductor And Integrated Circuits Div. Hitachi Ltd.

• MIURA Hideo

  Mechanical Engineering Research Laboratory, Hitachi, Ltd.

• Miura Hideo

  Mechanical Engineering Research Laboratory Hitachi Lid.

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• A High Performance p-Channel Transistor : β-MOS FET
• Molecular Dynamics Study of Stress Effects on Raman Frequencies of Crystalline Silicon
• Analog Circuit Design Methodology in a Low Power RISC Microprocessor (Srecial Section on Analong Circuit Tectningues in the Digital-oriented Era)
• Mechanical Stress Simulation for Highly Reliable Deep-Submicron Devices (Special Issue on TCAD for Semiconductor Industries)
• A 12.5-ns 16-Mb CMOS SRAM with Common-Centroid-Geometry-Layout Sense Amplifiers (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
• Stress Analysis of Transistor Structures Considering the Internal Stress of Thin Films
• Stress Analysis in Silicon Substrates during Thermal Oxidation
• Residual Stress in Silicon Substrate with Shallow Trenches on Surface after Local Thermal Oxidation
• Residual Stress Measurement in Silicon Substrates after Thermal Oxidation
• Thermal Stability of Pt Bottom Electrodes for Ferroelectric Capacitors
• METHOD FOR PREDICTION OF DISLOCATION GENERATION IN SILICON SUBSTRATES OF SEMICONDUCTOR DEVICES
• A High Performance p-Channel Transistor: β-MOS FET
• Effect of Phosphorus Doping on Crystallization-Induced Stress of Silicon Thin Films

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