Molecular Dynamics Study of Stress Effects on Raman Frequencies of Crystalline Silicon

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概要

• 論文の詳細を見る

• The effects of stress on the Raman frequencies of crystalline silicon are studied using molecular dynamics simulation both for uniaxial stress along the[100]direction and for biaxial stress which is isotropic in the(001)plane. The Tersoff potential is used to represent the interaction among the silicon atoms. Simulation results showed that the tensile stress causes the Raman frequencies to decrease. The conversion coefficients that are needed for converting the shifts of the Raman frequencies into the stress were obtained by comparing the simulation results with the dynamical equations for optical modes. The values obtained for the coefficients agreed well with the experimental values obtained by other works. The obtained relationship between the uniaxial stress and the Raman frequency for vibration in the[001]direction also agreed well with the experimental result we obtained using microscopic Raman spectroscopy.

• 社団法人日本機械学会の論文
• 1998-10-15

著者

• SASAKI Naoya

  Mechanical Engineering Research Laboratory, Hitachi, Ltd.

• MORIYA Hiroshi

  Mechanical Engineering Research Laboratory, Hitachi, Ltd.

• Iwasaki Tomio

  Mechanical Engineering Res. Lab. Hitachi Ltd.

• Moriya Hiroshi

  Mechanical Engineering Research Laboratory Hitachi Ltd.

• MIURA Hideo

  Mechanical Engineering Research Laboratory, Hitachi, Ltd.

• ISHITSUKA Norio

  Mechanical Engineering Research Laboratory, Hitachi, Ltd.

• Sasaki Naoya

  Mechanical Engineering Research Laboratory Hitachi Ltd.

• Moriya H

  Hitachi Ltd. Ibaraki Jpn

• Ishitsuka Norio

  Mechanical Engineering Research Laboratory Hitachi Ltd.

• Miura Hideo

  Mechanical Engineering Research Laboratory Hitachi Lid.

• IWASAKI Tomio

  Mechanical Eng. Res. Laboratory, Hitachi, Ltd.

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