B26-054 FIRST-PRINCIPLES-CALCULATION METHOD FOR OPTIMIZING STRAIN TO REDUCE GATE LEAKAGE CURRENT IN MOS TRANSISTORS WITH SILICON OXYNITRIDE GATE DIELECTRICS

スポンサーリンク

概要

• 論文の詳細を見る

• We developed a method for optimizing strain to reduce gate leakage current in metal-oxide-semiconductor (MOS) transistors by using first-principles calculations. This method was used to investigate the possibility of decreasing gate leakage current by controlling the strain on gate dielectric materials. We found that tensile strain increases the leakage current through both silicon oxide (SiO_2) and silicon oxynitride (SiON) gate dielectrics, whereas compressive strain hardly changes the leakage current through SiO_2 gate dielectrics and decreases the leakage current through SiON gate dielectrics. These changes reflect strain-induced change in the band gaps of these materials. Using finite element analysis to estimate the strain in MOS transistors, we showed the usability of SiON in terms of gate leakage currents and the importance of controlling the strain on the gate dielectric materials.

• 一般社団法人日本機械学会の論文
• 2003-11-30

著者

• MORIYA Hiroshi

  Mechanical Engineering Research Laboratory, Hitachi, Ltd.

• Iwasaki Tomio

  Mechanical Engineering Res. Lab. Hitachi Ltd.

• Moriya Hiroshi

  Mechanical Engineering Research Laboratory Hitachi Ltd.

• KANEGAE Yoshiharu

  Mechanical Engineering Research Laboratory, Hitachi, Ltd.

• Kanegae Y

  Mechanical Engineering Research Laboratory Hitachi Ltd.

• Kanegae Yoshiharu

  Mechanical Engineering Research Laboratory Hitachi Ltd.

• IWASAKI Tomio

  Mechanical Eng. Res. Laboratory, Hitachi, Ltd.

関連論文

• Parameter Optimization of Tersoff Interatomic Potentials Using a Genetic Algorithm
• Atomic-Level Modelling for Predicting Interface Strength in Resin Molded Structures
• Molecular Dynamics Study of Impurity Effects on Grain Boundary Grooving
• Analysis of Single-Crystalline Iron Tensile Deformation Using Approximation Neglecting Fluctuations and Molecular Dynamics Simulation
• Molecular Dynamics Simulation of Tensile Deformation of Iron Single Crystals Including Thermal Effect
• Application of Molecular-Dynamics Simulation to Interface Stabilization in Thin-Film Devices(Micro Mechanical Engineering)
• Molecular Dynamics Study of Stress Effects on Raman Frequencies of Crystalline Silicon
• B26-057 APPLICATION OF MOLECULAR-DYNAMICS SIMULATION TO INTERFACE STABILIZATION IN THIN-FILM DEVICES
• Molecular Dynamics Study on the Effect of Lattice Mismatch on Adhesion Strength between Ceramics and Organic Materials
• First-Principles-Calculation Method for Optimizing Strain to Reduce Gate Leakage Current in MOS Transistors with Silicon Oxynitride Gate Dielectrics
• B26-054 FIRST-PRINCIPLES-CALCULATION METHOD FOR OPTIMIZING STRAIN TO REDUCE GATE LEAKAGE CURRENT IN MOS TRANSISTORS WITH SILICON OXYNITRIDE GATE DIELECTRICS
• Nuclear Magnetic Resonance in Atomic-Scale Superconductor/Magnet Multilayered Systems (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
• Molecular dynamics study on the effect of lattice mismatch on adhesion strength between organic materials and metals
• Molecular Dynamics Study on the Effect of Lattice Mismatch on Adhesion Strength between Organic Materials and Metals

もっと見る 閉じる

スポンサーリンク