KANEGAE Yoshiharu | Mechanical Engineering Research Laboratory, Hitachi, Ltd.
スポンサーリンク
概要
関連著者
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MORIYA Hiroshi
Mechanical Engineering Research Laboratory, Hitachi, Ltd.
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Iwasaki Tomio
Mechanical Engineering Res. Lab. Hitachi Ltd.
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Moriya Hiroshi
Mechanical Engineering Research Laboratory Hitachi Ltd.
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KANEGAE Yoshiharu
Mechanical Engineering Research Laboratory, Hitachi, Ltd.
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Kanegae Y
Mechanical Engineering Research Laboratory Hitachi Ltd.
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Kanegae Yoshiharu
Mechanical Engineering Research Laboratory Hitachi Ltd.
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IWASAKI Tomio
Mechanical Eng. Res. Laboratory, Hitachi, Ltd.
著作論文
- First-Principles-Calculation Method for Optimizing Strain to Reduce Gate Leakage Current in MOS Transistors with Silicon Oxynitride Gate Dielectrics
- B26-054 FIRST-PRINCIPLES-CALCULATION METHOD FOR OPTIMIZING STRAIN TO REDUCE GATE LEAKAGE CURRENT IN MOS TRANSISTORS WITH SILICON OXYNITRIDE GATE DIELECTRICS