Residual Stress in Silicon Substrate with Shallow Trenches on Surface after Local Thermal Oxidation
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概要
- 論文の詳細を見る
Residual stress was investigated experimentally and analytically in silicon substrates after local thermal oxidation. Shallow trenches about 0.3μm deep were formed before 1000℃ oxidation. Residual stress in the substrate after oxidation was measured using microscopic Raman spectroscopy. Tensile stress of about 50MPa initially occurred at the substrate surface. However, the residual stress decreased to zero as the thermal oxide film thickness increased, and then compressive stress increased. The stress development process was analyzed using the finite-element method, and the results showed that three processes were mainly involved : oxidation-induced stress at the curved surface, deflection of the nitride film, which was used as an oxidation protection mask, and constraint of volume expansion of the newly oxidized film. The predicted and measured results were in good agreement for stress changes caused by increasing oxide film thickness.
- 一般社団法人日本機械学会の論文
- 1995-04-15
著者
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Ohta H
Okayama Univ. Dental School Okayama Jpn
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MIURA Hideo
Mechanical Engineering Research Laboratory, Hitachi, Ltd.
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MIKI Hiroshi
Department of Pathology, Kagawa Medical University
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Ohta H
Ibaraki Univ. Coll. Agriculture Ibaraki Jpn
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Saito Naoto
Mechanical Engineering Research Laboratory Hitachi Ltd.
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Miura H
Hitachi Ltd. Tsuchiura‐shi Jpn
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Okamoto Noriaki
Mechanical Engineering Research Laboratory Hitachi Ltd.
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OHTA Hiroyuki
Mechanical Engineering Research Laboratory, Hitachi, Ltd.
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Okamoto Noriaki
Mechanical Engineering Resarch Laboratory Hitachi Ltd.
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Ohta Hiroyuki
Mechanical Engineering Research Laboratory Hitachi Ltd.
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Miura Hideo
Mechanical Engineering Research Laboratory Hitachi Lid.
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Miki Hiroshi
Central Research Laboratory Hitachi Limited
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