Suppression of Leakage Current of Metal--Insulator--Semiconductor Ta2O5 Capacitors with Al2O3/SiON Buffer Layer
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概要
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An Al2O3/SiO buffer layer was incorporated in a metal--insulator--semiconductor (MIS) Ta2O5 capacitor for dynamic random access memory (DRAM) application. Al2O3 was chosen for the buffer layer owing to its high band offset against silicon and oxidation resistance against increase in effective oxide thickness (EOT). It was clarified that post-deposition annealing in nitrogen at 800 °C for 600 s increased the band offset between Al2O3 and the lower electrode and decreased leakage current by two orders of magnitude at 1 V. Furthermore, we predicted and experimentally confirmed that there was an optimized value of y in (Si3N4)y(SiO2)(1-y), which is 0.58, for minimizing the leakage current and EOT of SiON. To clarify the oxidation resistance and appropriate thickness of Al2O3, a TiN/Ta2O5/Al2O3/SiON/polycrystalline-silicon capacitor was fabricated. It was confirmed that the lower electrode was not oxidized during the crystallization annealing of Ta2O5. By setting the Al2O3 thickness to 3.4 nm, the leakage current is lowered below the required value with an EOT of 3.6 nm.
- 2011-10-25
著者
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武田 健一
日立製作所 中央研究所
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河江 達也
九州大工
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Takeda Kazuyuki
Department Of Chemistry Graduate School Of Science Kyoto University:(present Address)division Of Adv
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Takeda Ken-ichi
Central Research Laboratory Hitachi Ltd.
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Takeda Ken'ichi
Central Research Laboratory Hitachi Ltd.
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Tonomura Osamu
Central Research Laboratory Hitachi Ltd.
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Miki Hiroshi
Central Research Laboratory Hitachi Limited
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Takeda Ken-ichi
Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo 185-8601, Japan
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Takeda Ken-ichi
Hitachi, Ltd., Central Research Laboratory, 1-280 Higashikoigakubo Kokubunji-shi, Tokyo 185-8601, Japan
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Takeda Ken-ichi
Hitachi, Ltd., Central Research Laboratory, Kokubunji, Tokyo 185-8601, Japan
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Takeda Ken-ichi
Central Research Laboratory, Hitachi Ltd., Higashikoigakubo, Kokubunji, Tokyo 185-8601, Japan
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Takeda Ken-ichi
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Tonomura Osamu
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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河江 連也
九大工
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