The Study of Ultrathin Tantalum Oxide Films before and after Annealing with X-Ray Photoelectron Spectroscopy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-05-15
著者
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Yano F
Semiconductor & Integrated Circuits Division Hitachi Limited
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Yano Fumiko
Central Research Laboratory Hitachi Limited
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MUTO Akiko
Central Research Laboratory, Hitachi Ltd
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Muto Akiko
Central Research Laboratory Hitachi Ltd.
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SUGAWARA Yasuhiro
Central Research Laboratory, Hitachi Ltd.
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IIJIMA Shimpei
Central Research Laboratory, Hitachi Ltd.
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Iijima Shimpei
Central Research Laboratory Hitachi Ltd.
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Muto Akiko
Central Research Laboratory Hitachi Ltd
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Sugawara Yasuhiro
Central Research Laboratory Hitachi Ltd.
関連論文
- Estimation of the Thickness of Ultrathin Silicon Nitride Films by X-Ray Photoelectron Spectroscopy
- The Study of Ultrathin Tantalum Oxide Films before and after Annealing with X-Ray Photoelectron Spectroscopy
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- A New Atmospheric Pressure Ionization Mass Spectrometer for the Analysis of Trace Gas Impurities in Silicon Source Gases used for Semiconductor Fabrication
- IrO_2/Pb(Zr_xTi_)O_3(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to Hydrogen-Annealing Damage
- Time-resolved acquisition technique for spatially-resolved electron energy-loss spectroscopy by energy-filtering TEM
- Time-resolved acquisition technique for elemental mapping by energy-filtering TEM
- Current Status and Future Trend of Analytical Instruments for Failure Analyses in Si Process
- X-Ray Photoelectron Spectroscopy Study of Native Oxidation on Misoriented Si(100)