Reduction of Schottky Reverse Leakage Current Using GaAs Surface Cleaning with UVO_3 Treatment
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-07-15
著者
-
Ota H
Pioneer Corp. Saitama Jpn
-
TANIMOTO Takuma
Central Research Laboratory, Hitachi, Ltd.
-
OHBU Isao
Central Research Laboratory, Hitachi, Ltd.
-
TAKATANI Shinichiro
Central Research Laboratory, Hitachi, Ltd.
-
Takatani S
Hitachi Ltd. Tokyo Jpn
-
OHTA Hiroshi
Process Engineering Development Dept., Hitachi ULSI Systems Co., Ltd.
-
Ohta H
Process Engineering Development Dept. Hitachi Ulsi Systems Co. Ltd.
-
Ohbu I
Hitachi Ltd. Tokyo Jpn
-
Ohbu Isao
Central Research Laboratory Hitachi Ltd.
-
Tanimoto T
Shonan Inst. Technol. Kanagawa Jpn
-
Takatani Shinichiro
Central Research Laboratory Hitachi Ltd.
-
Tanimoto Takuma
Central Research Laboratory Hitachi Ltd.
-
Ohta Hiroshi
Process Engineering Development Dept. Hitachi Ulsi Systems Co. Ltd.
関連論文
- Stitching Error Analysis in an Electron Beam Lithography System: Column Vibration Effect
- The Requirements for Future Elcetron-Beam Reticle Fabrication Systems from an Error Analysis Viewpoint
- Error Analysis in Electron Beam Lithography System : Thermal Effects on Positioning Accuracy
- High-Performance HEMT with an Offset-Gate Structure for Millimeter-Wave Monolithic Microwave ICs
- Amorphous-Se/GaAs : A Novel Heterostructure for Solid-State Devices
- i-AlGaAs/n-GaAs doped-channel heterostructure insulated gate FET (DC-HIGFET) with n+-GaAs selectively grown by MOCVD
- Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In_Al_As/In_Ga_As/InAsP High-Electron-Mobility Structures on GaAs Substrates
- Dry Etching Damage and Activation Ratio Degradation in δ-Doped AlGaAs/InGaAs High Electron Mobility Transistors
- Single and Double δ-Doped Al_Ga_As/In_Ga_As Pseudomorphic Heterostructures Grown by Molecular-Beam Epitaxy
- Humidity Dependence of Photoluminescence in Coumarin-4-Doped Sol-Gel Coating Film
- Optical pH Sensing Properties of Coumarin-4-Doped Sol-Gel Coating Film
- Coumarin-4-Doped Sol-Get Coating Film as Optical pH Sensor
- Large Vessels of High-T_c Bi-Pb-Sr-Ca-Cu-O Superconductor for Magnetic Shield
- Magnetic Shield of High-T_c Oxide Superconductors at 77 K
- Reduction of Schottky Reverse Leakage Current Using GaAs Surface Cleaning with UVO_3 Treatment
- Evaluation of High-Efficiency LiNbO_3 Optical Phase Modulator Using Electrodes Buried in the Buffer Layer
- A Broad-Band Traveling-Wave Ti:LiNbO_3 Optical Phase Modulator
- Theoretical Analysis of Transconductance Enhancement Caused by Electron-Concentration-Dependent Screening in Heavily Doped Systems (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))
- Precipitation of γ-Fe_2O_3 from Ultrahigh Temperature Plasma
- ArF-Excimer-Laser-Assisted Highly Selective Etching of InGaAs/InAlAs Using HBr and F_2 Gas Mixture
- Fabrication of InAlAs/InGaAs High-Electron-Mobility Transistors Using ArF-Excimer-Laser-Assisted Damage-Free Highly Selective InGaAs/InAlAs Etching
- Highly-Selective Dry Etching of InAlAs Over InGaAs Assisted by ArF Excimer Laser with Cl_2 Gas
- Linearity Study on Enhance/Depletion Dual-Gate High Electron Mobility Transitors using Gain Mapping Method
- Tensile Stress-Strain Behavior of Piezoelectric Ceramics
- GaAs MESFET's with a Thermally Stable LaB_6 Self-Aligned Gate
- Diffusion of Gallium Vacancies from Low-Temperature-Grown GaAs
- Desorption of Indium during the Growth of GaAs/InGaAs/GaAs Heterostructures by Molecular Beam Epitaxy
- Single Voltage Supply High Efficiency InGaAs Pseudomorphic Double-Hetero HEMTs with Platinum Buried Gates
- Passivation of InP-Based Heterostructure Bipolar Transistors in Relation to Surface Fermi Level
- Evidence of Ga_2Se_3-Related Compounds on Se-Stabilized GaAs Surfaces
- Effect of H_2 Annealing on a Pt/PbZr_xTi_0_3 Interface Studied by X-Ray Photoelectron Spectroscopy
- Fatigue Degradation and Reliability of Piezoelectric Ceramics : Fundamentals