Linearity Study on Enhance/Depletion Dual-Gate High Electron Mobility Transitors using Gain Mapping Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-07-15
著者
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TANIMOTO Takuma
Central Research Laboratory, Hitachi, Ltd.
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OHBU Isao
Central Research Laboratory, Hitachi, Ltd.
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Ohbu Isao
Central Research Laboratory Hitachi Ltd.
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TAKAZAWA Hiroyuki
Central Research Laboratory, Hitachi Ltd.
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Takazawa H
Central Research Laboratory Hitachi Ltd.
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Takazawa Hiroyuki
Central Research Laboratory Hitachi Ltd.
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Kawai Akie
Central Research Laboratory, Hitachi, Ltd.
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Nakaura Tohru
Central Research Laboratory, Hitachi, Ltd.
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Kawai Akie
Central Research Laboratory Hitachi Ltd.
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Nakaura Tohru
Central Research Laboratory Hitachi Ltd.:department Of Electronics And Electrical Engineering Hosei
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Tanimoto Takuma
Central Research Laboratory Hitachi Ltd.
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- Reduction of Schottky Reverse Leakage Current Using GaAs Surface Cleaning with UVO_3 Treatment
- ArF-Excimer-Laser-Assisted Highly Selective Etching of InGaAs/InAlAs Using HBr and F_2 Gas Mixture
- Fabrication of InAlAs/InGaAs High-Electron-Mobility Transistors Using ArF-Excimer-Laser-Assisted Damage-Free Highly Selective InGaAs/InAlAs Etching
- Highly-Selective Dry Etching of InAlAs Over InGaAs Assisted by ArF Excimer Laser with Cl_2 Gas
- Linearity Study on Enhance/Depletion Dual-Gate High Electron Mobility Transitors using Gain Mapping Method
- Diffusion of Gallium Vacancies from Low-Temperature-Grown GaAs
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