Design and Performance of Intergate-Channel-Connected Multi-Gate pHEMT for Antenna Switch
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概要
- 論文の詳細を見る
Conventional multi-gate pseudomorphic high-electron-mobility transistors (pHEMTs) in the off-state generate larger distortion than single-gate pHEMTs in RF switch applications. To reduce the distortion, the intergate region of multi-gate pHEMTs must be connected to the source and drain with resistors to be biased at the same DC voltage. The intergate region of multi-gate pHEMTs is too small to have an external electrical contact, so intergate-channel-connected pHEMTs (IGCC-pHEMTs) have been developed. IGCC-pHEMTs have a meander gate structure, where one side of the gate is connected to a metal wire layer, and the other is applied for an intergate region contact that does not widen the distance between the gates. A single-pole double-throw (SPDT) switch with IGCC-pHEMTs was fabricated by using a standard 0.5µm InGaAs pHEMT process. A SPDT switch with IGCC-pHEMTs is confirmed to have almost same small-signal properties and generate lower distortions.
- (社)電子情報通信学会の論文
- 2011-06-01
著者
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Takazawa Hiroyuki
Central Research Laboratory Hitachi Ltd.
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Ogawa Takashi
Renesas Electronics Corp.
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KOYA Shigeki
Central Research Laboratory, Hitachi, Ltd.
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NAKAJIMA Akishige
Renesas Electronics Corp.
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OSAKABE Shinya
Renesas Electronics Corp.
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SHIGENO Yasushi
Renesas Electronics Corp.
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Koya Shigeki
Central Research Laboratory Hitachi Ltd.
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Takazawa Hiroyuki
Central Research Laboratory, Hitachi, Ltd.
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- Linearity Study on Enhance/Depletion Dual-Gate High Electron Mobility Transitors using Gain Mapping Method
- Design and Performance of Intergate-Channel-Connected Multi-Gate pHEMT for Antenna Switch