Desorption of Indium during the Growth of GaAs/InGaAs/GaAs Heterostructures by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-10-15

著者

• OHBU Isao

  Central Research Laboratory, Hitachi, Ltd.

• Ohbu Isao

  Central Research Laboratory Hitachi Ltd.

• Mozume Teruo

  Central Research Laboratory Hitachi Ltd.

関連論文

• High-Performance HEMT with an Offset-Gate Structure for Millimeter-Wave Monolithic Microwave ICs
• Reduction of Schottky Reverse Leakage Current Using GaAs Surface Cleaning with UVO_3 Treatment
• Linearity Study on Enhance/Depletion Dual-Gate High Electron Mobility Transitors using Gain Mapping Method
• Diffusion of Gallium Vacancies from Low-Temperature-Grown GaAs
• Desorption of Indium during the Growth of GaAs/InGaAs/GaAs Heterostructures by Molecular Beam Epitaxy
• Single Voltage Supply High Efficiency InGaAs Pseudomorphic Double-Hetero HEMTs with Platinum Buried Gates
• Gas-Source Molecular Beam Epitaxy of GaN_xAs_ Using a N Radical as the N Source

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