Gas-Source Molecular Beam Epitaxy of GaN_xAs_<1-x> Using a N Radical as the N Source
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概要
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We propose the application of GaNAs as a novel material fabricated on a Si wafer. It is a direct-transition type semiconductor, and can be lattice-matched to Si. Therefore, it is valid for use in the active region of light-emitting devices fabricated on Si. In this letter, GaNAs with a low N content is grown on a GaAs wafer to explore the gas-source molecular beam epitaxy under which a N radical is used as the N source. As a consequence, GaNAs with a N content up to 1.5% is grown, even though the conductance of the N-radical beam cell is fixed at a very low value. The bowing parameter of the bandgap is experimentally evaluated at 18 eV.
- 社団法人応用物理学会の論文
- 1994-08-01
著者
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KONDOW Masahiko
Central Research Laboratory, Hitachi, Ltd.
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HOSOMI Kazuhiko
Central Research Laboratory, Hitachi, Ltd.
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Kondow Masahiko
Central Research Laboratory Hitachi Ltd.
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Hosomi Kazuhiko
Central Research Laboratory Hitachi Ltd.
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Mozume Teruo
Central Research Laboratory Hitachi Ltd.
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Uomi Kazuhisa
Central Research Laboratory Hitachi Ltd.
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