First Lasing Operation of Aluminum-Free 0.98-μm-Range InGaAs/InGaP/GaAs Vertical-Cavity Surface-Emitting Lasers

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• UOMI Kazuhisa

  The author is with Optical Device Department, Telecommunications System Group, Hitachi Ltd.

• Hiramoto Kiyohisa

  Central Research Laboratory Hitachi Ltd.

• Hiramoto Kiyohisa

  Central Research Laboratory

• Uomi K

  The Author Is With Optical Device Department Telecommunications System Group Hitachi Ltd.

• Uomi Kazuhisa

  Central Research Laboratory Hitachi Ltd.

• Shinoda K

  Hitachi Ltd. Tokyo Jpn

• Shinoda Kazunori

  Central Research Laboratory Hitachi Ltd.

• SAGAWA Misuzu

  Central Research Laboratory, Hitachi Ltd.

• Sagawa Misuzu

  Central Research Laboratory Hitachi Limited

• Sagawa Misuzu

  Central Research Laboratory Hitachi Ltd.

• Shinoda Kazunori

  Central Research Laboratory Hamamatsu Photonics K. K.

• SAGAWA Misuzu

  Central Research Laboratory

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• First Lasing Operation of Aluminum-Free 0.98-μm-Range InGaAs/InGaP/GaAs Vertical-Cavity Surface-Emitting Lasers
• Strain-Compensation Effect on the Reduction of Lattice Distortion in InGaAs/(In)GaAs(P) Strained Quantum-well Structures on GaAs Substrates
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• Lasing Operation of InGaAsP-Based InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers with a Strain-Compensated Active Region

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