High-Reflectivity InGaP/GaAs Multilayer Reflector Grown by MOCVD for Highly Reliable 0.98-μm Vertical-Cavity Surface-Emitting Lasers
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概要
- 論文の詳細を見る
We report an InGaP/GaAs multilayer grown by low-pressure MOCVD for highly reliable 0.98-μm InGaAs vertical-cavity surface-emitting lasers. High reflectivity of over 99% is obtained for the 45-period multilayer. The stability of the layer thickness over the entire multilayer is discussed from the viewpoint of the asymmetrical reflectivity spectrum. Our results indicate that the layer thickness slightly decreases during epitaxial growth.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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Uomi Kazuhisa
Central Research Laboratory, Hitachi Ltd.
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SHINODA Kazunori
Central Research Laboratory, Hitachi, Ltd.
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TSUCHIYA Tomonobu
Central Research Laboratory, Hitachi, Ltd.
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UOMI Kazuhisa
The author is with Optical Device Department, Telecommunications System Group, Hitachi Ltd.
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Tsuchiya Tomonobu
Central Research Laboratory Hitachi Ltd
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Hiramoto Kiyohisa
Central Research Laboratory Hitachi Ltd.
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Hiramoto Kiyohisa
Central Research Laboratory
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Uomi K
The Author Is With Optical Device Department Telecommunications System Group Hitachi Ltd.
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Uomi Kazuhisa
Central Research Laboratory Hitachi Ltd.
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Shinoda K
Hitachi Ltd. Tokyo Jpn
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Shinoda Kazunori
Central Research Laboratory Hitachi Ltd.
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Shinoda Kazunori
Central Research Laboratory Hamamatsu Photonics K. K.
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