Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-09-15

著者

• Kondow M

  Central Research Laboratory Hitachi Ltd.

• KONDOW Masahiko

  Central Research Laboratory, Hitachi, Ltd.

• KITATANI Takeshi

  RWCP Optical Interconnection Hitachi Laboratory co Central Research Laboratory, Hitachi, Ltd.

• Kikawa Takeshi

  Central Research Laboratory, Hitachi Ltd.

• Yazawa Yoshiaki

  Central Research Laboratory, Hitachi Ltd.

• Okai Makoto

  Central Research Laboratory, Hitachi Ltd.

• Uomi Kazuhisa

  Central Research Laboratory, Hitachi Ltd.

• UOMI Kazuhisa

  The author is with Optical Device Department, Telecommunications System Group, Hitachi Ltd.

• Kondow M

  Hitachi Ltd. Tokyo Jpn

• Kondow Masahiko

  Central Research Laboratory Hitachi Ltd.

• Kondow Masahiko

  Graduate School Of Engineering Osaka University

• Okai M

  Hitachi Ltd. Tokyo Jpn

• Uomi K

  The Author Is With Optical Device Department Telecommunications System Group Hitachi Ltd.

• Uomi Kazuhisa

  Central Research Laboratory Hitachi Ltd.

• Kikawa Takeshi

  Central Research Laboratory Hitachi Ltd.

• Yazawa Y

  Hitachi Ltd. Tokyo Jpn

• Yazawa Yoshiaki

  Central Research Laboratory Hitachi Ltd.

• Kitatani T

  Hitachi Ltd. Central Research Laboratory

• Kitatani Takeshi

  Rwcp Optical Interconnection Hitachi Laboratory C-o Central Research Laboratory Hitachi Ltd.

関連論文

• Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
• Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
• Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
• Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
• Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
• Index-Guide GaInNAs Laser Diode for Optical Communications
• Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
• Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
• Numerical Analysis of Beam-Expanders Integrated with Laser Diodes(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
• Beam Expander-Integrated Lasers Grown by Single-Step MOVPE
• Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy
• Amorphous-Se/GaAs : A Novel Heterostructure for Solid-State Devices
• In Situ X-Ray Monitoring of Metalorganic Vapor Phase Epitaxy
• Improved Self-Aligned Structure for GaAlAs High-Power Lasers
• Recent Progress in GaInNAs Laser(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
• A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
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• Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
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• Proposal on Reducing the Damping Constant in Semiconductor Lasers by Using Quantum Well Structures
• High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well Lasers
• Characterization of the Refractive Index of Lateral-Oxidation-Formed Al_xO_y by Spectroscopic Ellipsometry
• In situ Annealing of GaInNAs up to 600°C
• Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. : I. Theory
• Fabrication of -Oriented Si Film with a Ni/Ti Layer by Metal Induced Crystallization : Semiconductors
• Gas-Source Molecular Beam Epitaxy of GaN_xAs_ Using a N Radical as the N Source
• First Lasing Operation of Aluminum-Free 0.98-μm-Range InGaAs/InGaP/GaAs Vertical-Cavity Surface-Emitting Lasers
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• Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity
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• GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
• Amplified Spontaneous Emission Measurement of GaInNAs Laser Wafers with and without Rapid Thermal Annealing
• Over 1.5 μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
• Infrared Absorption Spectrum of GaInNAs
• Characterization of the Oxide Film Obtained by Wet Oxidation of Al-Rich AlGaAs
• Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
• Over 1.5μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication (Special Issue : Solid State Devices and Materials)
• Lasing Operation of InGaAsP-Based InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers with a Strain-Compensated Active Region

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