Lasing Operation of InGaAsP-Based InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers with a Strain-Compensated Active Region
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概要
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We demonstrate the first lasing operation of InGaAsP-based 0.98-µm-range vertical-cavity surface-emitting lasers (VCSELs). The laser consists of a high reflectivity 45.5-pair InGaP/GaAs multilayer reflector, a strain-compensated InGaAs/InGaAsP triple-quantum-well active region, and a 10-pair SiO2/ TiO2 multilayer reflector. The 11-µm-diameter VCSEL exhibited a threshold current of 1.7 mA and a low threshold voltage of 1.6 V under pulsed operation at room temperature. Continuous-wave operation was also obtained with a threshold current of 2.8 mA.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1996-09-15
著者
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Hiramoto Kiyohisa
Central Research Laboratory
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Uomi Kazuhisa
Central Research Laboratory Hitachi Ltd.
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Shinoda Kazunori
Central Research Laboratory Hamamatsu Photonics K. K.
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SAGAWA Misuzu
Central Research Laboratory
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Uomi Kazuhisa
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185, Japan
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Shinoda Kazunori
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185, Japan
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