Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. : I. Theory
スポンサーリンク
概要
- 論文の詳細を見る
A number of important parameters, such as gain, modulation response and threshold current in modulation-doped multi-quantum-well (MD-MQW) lasers are theoretically investigated. The analytical results indicate that the relaxation oscillation frequency of p-type MD-MQW lasers is enhanced by a factor of 4 compared with DH lasers, and that the linewidth enhancement factor of p-type MD-MQW lasers is reduced to 1/4 that of undoped MQW lasers. The threshold current density of n-type MD-MQW lasers is reduced to 1/2〜1/4 that of undoped MQW lasers. The improvements in these properties basically result from the unsatisfied charge neutrality due to the modulation doped effect and from asymmetry in density of states between conduction band and valence bands in III-V materials.
- 社団法人応用物理学会の論文
- 1990-01-20
著者
関連論文
- Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
- Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
- Beam Expander-Integrated Lasers Grown by Single-Step MOVPE
- In Situ X-Ray Monitoring of Metalorganic Vapor Phase Epitaxy
- Improved Self-Aligned Structure for GaAlAs High-Power Lasers
- Direct Wafer Bonding Technique Aiming for Free-Material and Free-Orientation Integration of Semiconductor Materials
- High-Reflectivity InGaP/GaAs Multilayer Reflector Grown by MOCVD for Highly Reliable 0.98-μm Vertical-Cavity Surface-Emitting Lasers
- Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. : II. Experiment
- Proposal on Reducing the Damping Constant in Semiconductor Lasers by Using Quantum Well Structures
- High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well Lasers
- Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. : I. Theory
- Gas-Source Molecular Beam Epitaxy of GaN_xAs_ Using a N Radical as the N Source
- First Lasing Operation of Aluminum-Free 0.98-μm-Range InGaAs/InGaP/GaAs Vertical-Cavity Surface-Emitting Lasers
- GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
- Lasing Operation of InGaAsP-Based InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers with a Strain-Compensated Active Region