Strain-Compensation Effect on the Reduction of Lattice Distortion in InGaAs/(In)GaAs(P) Strained Quantum-well Structures on GaAs Substrates

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概要

• 論文の詳細を見る

• InGaAs/InGaAsP strained quantum-well (QW) structures grown by metal-organic vapor phase epitaxy on (001) GaAs substrates were investigated using photoluminescence measurement and transmission electron microscopy. The lattice distortion in and near the QW structures caused by compressive strain in the InGaAs wells was reduced far below that of ordinary InGaAs/GaAs QW structures and the maximum number of QWs without cross-hatched patterns on the samples can be increased when tensile-strain InGaAsP barriers were introduced.

• 社団法人応用物理学会の論文
• 1997-12-15

著者

• Hiramoto Kiyohisa

  Central Research Laboratory

• SAGAWA Misuzu

  Central Research Laboratory, Hitachi Ltd.

• TOYONAKA Takashi

  Telecommunications Division, Hitachi Ltd.

• Sagawa M

  Central Research Laboratory

• Sagawa Misuzu

  Central Research Laboratory Hitachi Limited

• Toyonaka Takashi

  Telecommunications Division Hitachi Ltd.

• SAGAWA Misuzu

  Central Research Laboratory

関連論文

• High-Reflectivity InGaP/GaAs Multilayer Reflector Grown by MOCVD for Highly Reliable 0.98-μm Vertical-Cavity Surface-Emitting Lasers
• First Lasing Operation of Aluminum-Free 0.98-μm-Range InGaAs/InGaP/GaAs Vertical-Cavity Surface-Emitting Lasers
• Strain-Compensation Effect on the Reduction of Lattice Distortion in InGaAs/(In)GaAs(P) Strained Quantum-well Structures on GaAs Substrates
• Complete-Single-Mode Operation of 180° Mode Phased Array Lasers by Improving Temperature Distribution Inside the Stripe Region
• Lasing Operation of InGaAsP-Based InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers with a Strain-Compensated Active Region

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