Fabrication of <111>-Oriented Si Film with a Ni/Ti Layer by Metal Induced Crystallization : Semiconductors

概要

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We used metal-induced-crystallization (MIC) to crystallize amorphous silicon (a-Si) films over 1 μm thick. We employed a Ni/Ti layer for MIC. The a-Si films with the Ni/Ti layer were annealed at 550℃. We found that a 6-μm-thick Si film was oriented in the <111> direction by inserting a Ti layer between Ni and the glass substrate. If the thicknesses of the Ni and Ti layer were nearly the same, the peak intensity ratio of the (220) to (111) planes was 3%. This oriented growth tendency is maintained from the beginning of crystallization to the full-crystallized stage.
社団法人応用物理学会の論文
2001-03-01