Estimation of Low Ga-Content (Less Than 10%) in A1GaAs by Spectroscopic Ellipsometry
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概要
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With the aim of fabricating a robust oxide-vertical cavity surface emitting laser (VCSEL), A1GaAs with a low Ga-content (around 2%) was used as an oxide-aperture layer. Spectroscopic ellipsometry (SE) was then used to confirm this low Ga-content in AlGaAs. Small differences in the optical constant of 100-nm-thick AlGaAs can be clearly identified in the SE spectra. The oxidation length varies exponentially with Ga-content directly measured by SE (less than 10%). This high degree of selectivity for a given oxidation rate is in good agreement with previous reports. Therefore, SE can estimate low Ga-content in AlGaAs precisely, even though the layer thickness is close to the quarter-wave thickness of Ill-V semiconductors at 1.3 or 1.55 μm. This precise estimation enables the determination of lateral oxidation conditions as well as the estimation of the Ga-content in the same sample. It is thus concluded that SE will improve the mass-production of these devices as well as device reliability.
- 社団法人応用物理学会の論文
- 2002-10-15
著者
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Kondow Masahiko
Central Research Laboratory Hitachi Ltd.
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Kondow Masahiko
Central Research Laboratory Hitachi. Ltd.
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Kitatani Takeshi
Central Research Laboratory Hitachi Ltd.
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Kitatani Takeshi
Central Research Laboratory Hitachi. Ltd.
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