Amorphous-Se/GaAs : A Novel Heterostructure for Solid-State Devices

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Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
High-Performance HEMT with an Offset-Gate Structure for Millimeter-Wave Monolithic Microwave ICs
Amorphous-Se/GaAs : A Novel Heterostructure for Solid-State Devices
i-AlGaAs/n-GaAs doped-channel heterostructure insulated gate FET (DC-HIGFET) with n+-GaAs selectively grown by MOCVD
Investigation of the Si Oxidation Process by XANES Spectroscopy Using Synchrotron Radiation
Effect of Tl and Metallic Element Addition to In-Se Based Phase-change Optical Recording Film : MEDIA
Studies of NH_3 Thermal Nitridation of Ultrathin Si-Oxide Films on Si using Photoemission Spectroscopy with Synchrotron Radiation
Estimation of the Thickness of Ultrathin Silicon Nitride Films by X-Ray Photoelectron Spectroscopy
Surface Analysis of LaB_6 Single Crystal Thermionic Emitters
Reduction of Schottky Reverse Leakage Current Using GaAs Surface Cleaning with UVO_3 Treatment
ArF-Excimer-Laser-Assisted Highly Selective Etching of InGaAs/InAlAs Using HBr and F_2 Gas Mixture
Fabrication of InAlAs/InGaAs High-Electron-Mobility Transistors Using ArF-Excimer-Laser-Assisted Damage-Free Highly Selective InGaAs/InAlAs Etching
Highly-Selective Dry Etching of InAlAs Over InGaAs Assisted by ArF Excimer Laser with Cl_2 Gas
GaAs MESFET's with a Thermally Stable LaB_6 Self-Aligned Gate
Passivation of InP-Based Heterostructure Bipolar Transistors in Relation to Surface Fermi Level
Evidence of Ga_2Se_3-Related Compounds on Se-Stabilized GaAs Surfaces
Effect of H_2 Annealing on a Pt/PbZr_xTi_0_3 Interface Studied by X-Ray Photoelectron Spectroscopy
Defect Termination by Nitrogen Bonding due to NO Nitridation in MOS Structures

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