Studies of NH_3 Thermal Nitridation of Ultrathin Si-Oxide Films on Si using Photoemission Spectroscopy with Synchrotron Radiation

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-01-15

著者

• NAKAZAWA Masatoshi

  Central Research Laboratory, Hitachi Lid.

• Nakazawa Masatoshi

  Central Resarch Laboratory Hitachi Ltd.

• Nakazawa Masatoshi

  Central Research Laboratory

• YAMAMOTO Ken-ichi

  Central Research Laboratory

関連論文

• Amorphous-Se/GaAs : A Novel Heterostructure for Solid-State Devices
• Investigation of the Si Oxidation Process by XANES Spectroscopy Using Synchrotron Radiation
• Effect of Tl and Metallic Element Addition to In-Se Based Phase-change Optical Recording Film : MEDIA
• Studies of NH_3 Thermal Nitridation of Ultrathin Si-Oxide Films on Si using Photoemission Spectroscopy with Synchrotron Radiation
• Estimation of the Thickness of Ultrathin Silicon Nitride Films by X-Ray Photoelectron Spectroscopy
• Surface Analysis of LaB_6 Single Crystal Thermionic Emitters

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