Takatani S | Hitachi Ltd. Tokyo Jpn
スポンサーリンク
概要
関連著者
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Takatani S
Hitachi Ltd. Tokyo Jpn
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TAKATANI Shinichiro
Central Research Laboratory, Hitachi, Ltd.
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Takatani Shinichiro
Central Research Laboratory Hitachi Ltd.
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Ota H
Pioneer Corp. Saitama Jpn
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TANIMOTO Takuma
Central Research Laboratory, Hitachi, Ltd.
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OHBU Isao
Central Research Laboratory, Hitachi, Ltd.
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Ohta H
Process Engineering Development Dept. Hitachi Ulsi Systems Co. Ltd.
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Ohbu I
Hitachi Ltd. Tokyo Jpn
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Ohbu Isao
Central Research Laboratory Hitachi Ltd.
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Tanimoto T
Shonan Inst. Technol. Kanagawa Jpn
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Tanimoto Takuma
Central Research Laboratory Hitachi Ltd.
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Kikawa Takeshi
Central Research Laboratory, Hitachi Ltd.
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Kondoh H
Hitachi Ltd. Tokyo
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OHTA Hiroshi
Hitachi ULSI Engineering, Corp.
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HIGUCHI Katsuhiko
Central Research Laboratory, Hitachi, Ltd.
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KURITA Naoyuki
Central Research Laboratory, Hitachi, Ltd.
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KAMOZAKI Keigo
Central Research Laboratory, Hitachi, Ltd.
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KONDOH Hiroshi
Central Research Laboratory, Hitachi, Ltd.
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NAKAZAWA Masatoshi
Central Research Laboratory, Hitachi Lid.
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OHTA Hiroshi
Process Engineering Development Dept., Hitachi ULSI Systems Co., Ltd.
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Nakazawa Masatoshi
Central Resarch Laboratory Hitachi Ltd.
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Nakazawa Masatoshi
Central Research Laboratory Hitachi Lid.
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Kondoh Hiroshi
Central Research Laboratory Hitachi Ltd.
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Kamozaki Keigo
Central Research Laboratory Hitachi Ltd.
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Kurita N
Central Research Laboratory Hitachi Ltd.
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Kikawa T
Hitachi Ltd. Tokyo Jpn
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Kikawa Takeshi
Central Research Laboratory Hitachi Ltd.
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Higuchi Katsuhiko
Central Research Lab. Hitachi Ltd.
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Higuchi Katsuhiko
Central Research Laboratory Hitachi Ltd.
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Ohta Hiroshi
Process Engineering Development Dept. Hitachi Ulsi Systems Co. Ltd.
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Kondoh Hiroshi
Central Res. Lab. Hitachi Ltd.
著作論文
- High-Performance HEMT with an Offset-Gate Structure for Millimeter-Wave Monolithic Microwave ICs
- Amorphous-Se/GaAs : A Novel Heterostructure for Solid-State Devices
- i-AlGaAs/n-GaAs doped-channel heterostructure insulated gate FET (DC-HIGFET) with n+-GaAs selectively grown by MOCVD
- Reduction of Schottky Reverse Leakage Current Using GaAs Surface Cleaning with UVO_3 Treatment