i-AlGaAs/n-GaAs doped-channel heterostructure insulated gate FET (DC-HIGFET) with n+-GaAs selectively grown by MOCVD

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概要

• 論文の詳細を見る

著者

• Takatani S

  Hitachi Ltd. Tokyo Jpn

関連論文

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• i-AlGaAs/n-GaAs doped-channel heterostructure insulated gate FET (DC-HIGFET) with n+-GaAs selectively grown by MOCVD
• Reduction of Schottky Reverse Leakage Current Using GaAs Surface Cleaning with UVO_3 Treatment

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