Characterization of the Oxide Film Obtained by Wet Oxidation of Al-Rich AlGaAs
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概要
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We investigate the characteristics of oxide film obtained by wet oxidation of AlxGa1-xAs with its Al concentration x between 0.55 and 0.99. 300-nm-thick AlxGa1-xAs grown on GaAs substrate by molecular beam epitaxy is wet-oxidized in a furnace at 410 °C for 120 min. Samples having x greater than 0.8 are confirmed to be oxidized from their observation, examined by X-ray diffraction showing the vanished crystallographic diffraction peaks. Scanning electron microscopy, X-ray reflectivity, and spectroscopic ellipsometry study determines the thickness, density and refractive index of the oxide films.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2012-02-25
著者
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Kondow Masahiko
Graduate School Of Engineering Osaka University
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Ishikawa Fumitaro
Graduate School Of Electronics And Information Engineering Hokkaido University
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Yamada Takahiro
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Hirai Yuichiro
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Ishikawa Fumitaro
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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