Ishikawa Fumitaro | Graduate School Of Electronics And Information Engineering Hokkaido University

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概要

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著作論文

Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy
Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
Reduction of $S$-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study
Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots
Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity
Unintentional Source Incorporation in Plasma-Assisted Molecular Beam Epitaxy
Over 1.5 μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
Characterization of the Oxide Film Obtained by Wet Oxidation of Al-Rich AlGaAs
Formation of Minibands on Superlattice Structure with Periodically Arranged \delta-Doped Nitrogen into GaAs
Over 1.5μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication (Special Issue : Solid State Devices and Materials)
Formation of Minibands on Superlattice Structure with Periodically Arranged \delta-Doped Nitrogen into GaAs

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