In situ Annealing of GaInNAs up to 600°C

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概要

• 論文の詳細を見る

• We have found that the optimum annealing temperature for GaInNAs depends on the crystallinity of the as-grown crystal, and that GaInNAs with superior crystallinity grown by solid-source molecular beam epitaxy can survive at 600°C during a considerably long annealing process.

• 2001-01-15

著者

• Kondow Masahiko

  Rwcp Optical Interconnection Hitachi Laboratory C-o Central Research Laboratory Hitachi Ltd.

• Kitatani Takeshi

  Rwcp Optical Interconnection Hitachi Laboratory C-o Central Research Laboratory Hitachi Ltd.

• Kitatani Takeshi

  RWCP Optoelectronics Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Kondow Masahiko

  RWCP Optoelectronics Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

関連論文

• Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
• Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
• Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
• Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
• Index-Guide GaInNAs Laser Diode for Optical Communications
• Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
• Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
• A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
• A 1.3-μm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
• Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells (Short Note)
• Index-Guide GaInNAs Laser Diode for Optical Communications
• Characterization of the Refractive Index of Lateral-Oxidation-Formed Al_xO_y by Spectroscopic Ellipsometry
• In situ Annealing of GaInNAs up to 600°C
• GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

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